The automatization of the atom probe tomography (APT) tip preparation using a focused ion beam (FIB) with a scanning electron microscopy ...

The grain boundary diffusion process (GBDP) is one of the most efficient treatments for increasing the coercivity (Hc) of Nd-Fe-B magnets...

An area selectable Mg doping via ion implantation (I/I) is essential to realize gallium nitride (GaN) based power switching devices. Conv...

We report on fully epitaxial Ru/Cu heterostructures fabricated with interface engineering and nanolayer insertions consisting of Cu (1nm)...

Epitaxial thin films of fully nonequilibrium hcp-Ru_50Mo_50(0001) nanoalloys were prepared as a chemically disordered alloy, in which the...

Aberration-corrected scanning transmission electron microscopy (STEM) has been advancing resolution, sensitivity, and microanalysis due t...

GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS g...

The nanocrystalline structure and soft magnetic properties of melt-spun Fe-B-P-Cu ribbons are largely influenced by heating rates for cry...

We investigated the influence of the buffer material and a cryogenic temperature deposition process on the voltage-controlled magnetic an...

Ni-base superalloys are known for their high temperature oxidation resistance, however, impurity of S at ppm order can significantly dec...