Index Catalog // MDR

Calculations of electron inelastic mean free paths.VIII. Data for 15 elemental solids over the 50-2000 eV range

Description/Abstract:: We report calculations of electron inelastic mean free paths (IMFPs) for 50 eV to 2000 eV electrons in 14 elemental solids (Li, Be, diamo...
Keyword:: IMFP, Li, Be, diamond, graphite, Na, K, Sc, Ge, In, Sn, Cs, Gd, Tb, Dy, Al, TPP-2M equation, electron inelastic mean free path, and rare-earth elements
Resource Type:: Article
Author:: TANUMA, Shigeo, C.J. Powell, and D.R. Penn
Journal:: SURFACE AND INTERFACE ANALYSIS
Date Uploaded:: 29/05/2023
Date Modified:: 30/05/2023

Energy Dependence of Electron Stopping Powers in Elemental Solids over the 100 eV to 30 keV Energy Range

Description/Abstract:: We analyzed the energy dependence of electron stopping powers (SPs) calculated for 41 elemental solids from experimental optical data for...
Keyword:: Electron stopping power, Elemental solids, Energy dependence, and Fano plo
Resource Type:: Article
Author:: KUMAGAI, kazuhiro, TANUMA, Shigeo, and C.J. Powell
Journal:: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Date Uploaded:: 29/05/2023

Inelastic Scattering of Electrons in Solids

Description/Abstract:: An overview is given of inelastic electron scattering in solids with an emphasis on calculations and measurements of electron inelastic m...
Keyword:: electrons, inelastic mean free path, and inelastic scattering
Resource Type:: Book
Author:: TANUMA, Shigeo and C. J. Powell
Date Uploaded:: 03/02/2023

先端共用施設・技術プラットフォームの展望と課題 − ナノテクノロジープラットフォーム事業をベースとして −

Description/Abstract:: わが国の先端共用・技術プラットフォームの展望と課題を、ナノテクノロジープラットフォーム事業の実績と経験にもとづいて，１）現在まで達成されていること，２）解決し得ない構造的な問題，３）今後取り組むべき課題，４）将来へ向けた方向性について検討した。これにあたっては...
Keyword:: ナノテクノロジープラットフォーム事業の成果と課題, ナノテクノロジープラットフォーム事業の活動実績, 共用施策設計, 装置と知の共用, and 施設・装置の平等な利用機会
Resource Type:: Presentation
Author:: TANUMA, Shigeo
Date Uploaded:: 25/04/2022
Date Modified:: 10/05/2022

Depth Profiling Analysis of InP/GaInAsP Multilayers by Auger Electron Spectroscopy, Quantitative Evaluation of the Surface Roughness Caused by Ion Sputtering

Description/Abstract:: We have conducted Auger depth profiling analyses of InP/GaInAsP multilayer specimens, in which the surface roughness was caused by the ar...
Keyword:: Auger depth profiling analysis, InP/GaInAsP multilayer specimens, surface roughness, atomic force microscope, and depth resolution function
Material/Specimen:: InP/GaInAsP multilayer specimens
Resource Type:: Article
Author:: OGIWARA, Toshiya and TANUMA, Shigeo
Journal:: Journal of The Surface Science Society of Japan
Date Uploaded:: 01/10/2021
Date Modified:: 01/10/2021

Auger Depth Profiling Analyses of InP/GaInAsP Multilayers

Description/Abstract:: We have investigated the dependence of the depth resolution of Auger depth profiles of InP/GaInAsP multilayer specimens on the sputtering...
Keyword:: Auger depth profiling analysis, InP/GaInAsP multilayer specimens, and argon ion sputtering
Material/Specimen:: InP/GaInAsP multilayer specimens
Resource Type:: Article
Author:: OGIWARA, Toshiya and TANUMA, Shigeo
Journal:: Journal of The Surface Science Society of Japan
Date Uploaded:: 01/10/2021
Date Modified:: 01/10/2021

Auger Depth Profile Analysis of GaAs/AIAs Thin Film by Synthesized Spectrum Method Using Non-Negative Least Square Curve Fitting

Description/Abstract:: We have carried out the Auger depth profiling analysis of GaAs/AIAs multilayer structure using the peaks of GaMVV and A1LVV. Since the tw...
Keyword:: Auger depth profiling analysis, GaAs/AlAs multilayer, non-negative least-square curve fit, and peak separation
Material/Specimen:: GaAs/AlAs multilayer
Resource Type:: Article
Author:: OGIWARA, Toshiya and TANUMA, Shigeo
Journal:: Journal of The Surface Science Society of Japan
Date Uploaded:: 01/10/2021
Date Modified:: 01/10/2021

Depth Profiling Analysis of InP/GaInAsP Multilayer Structure with Auger Electron Spectroscopy by Using Argon Ion Spot Beam

Description/Abstract:: It is very difficult to obtained the Auger depth profile of InP multilayer structures with argon ion sputtering because the very large su...
Keyword:: Auger Depth Profiling Analysis, Argon Ion Spot Beam, and InP/GaInAsP Multilayer Specimen
Material/Specimen:: InP/GaInAsP Multilayer
Resource Type:: Article
Author:: OGIWARA, Toshiya, HARADA, Tomoko, and TANUMA, Shigeo
Journal:: Journal of The Surface Science Society of Japan
Date Uploaded:: 01/10/2021
Date Modified:: 01/10/2021

First-principles calculations of optical constants

Description/Abstract:: The energy loss function (ELF) describes the interaction between electrons and matter in solids. It is essential for understanding quanti...
Keyword:: compound semiconductor, energy loss function, first-principles calculation, and optical constant
Resource Type:: Dataset
Data origin:: simulations
Author:: SHINOTSUKA, Hiroshi, YOSHIKAWA, Hideki, and TANUMA, Shigeo
Journal:: e-Journal of Surface Science and Nanotechnology
Date Uploaded:: 18/01/2021
Date Modified:: 07/07/2021

Summary of ISO/TC 201 Standard: XX ISO 18118: 2004 — Surface chemical analysis — Auger electron spectroscopy and X-ray photoelectron spectroscopy —Guide to the use of experimentally determined relative sensitivity factors for the quantitative analysis of homogeneous materials

Description/Abstract:: ISO 18118 provides guidance on the measurement and use of experimentally determined relative sensitivity factors for the quantitative ana...
Keyword:: AES, Auger electron spectroscopy, ISO, International Organization for Standardization, X-ray photoelectron spectroscopy, XPS, quantitative surface analysis, and relative sensitivity factor
Resource Type:: Article
Author:: TANUMA, Shigeo
Journal:: Surface and Interface Analysis
Date Uploaded:: 08/10/2020
Date Modified:: 01/07/2021

Calculations of electron inelastic mean free paths.VIII. Data for 15 elemental solids over the 50-2000 eV range

Energy Dependence of Electron Stopping Powers in Elemental Solids over the 100 eV to 30 keV Energy Range

Inelastic Scattering of Electrons in Solids

先端共用施設・技術プラットフォームの展望と課題 − ナノテクノロジープラットフォーム事業をベースとして −

Depth Profiling Analysis of InP/GaInAsP Multilayers by Auger Electron Spectroscopy, Quantitative Evaluation of the Surface Roughness Caused by Ion Sputtering

Auger Depth Profiling Analyses of InP/GaInAsP Multilayers

Auger Depth Profile Analysis of GaAs/AIAs Thin Film by Synthesized Spectrum Method Using Non-Negative Least Square Curve Fitting

Depth Profiling Analysis of InP/GaInAsP Multilayer Structure with Auger Electron Spectroscopy by Using Argon Ion Spot Beam

First-principles calculations of optical constants

Summary of ISO/TC 201 Standard: XX ISO 18118: 2004 — Surface chemical analysis — Auger electron spectroscopy and X-ray photoelectron spectroscopy —Guide to the use of experimentally determined relative sensitivity factors for the quantitative analysis of homogeneous materials

Limit your search

Type of work

Keyword

Language

Publisher

Resource type

Visibility

Rights Statement Sim

Computational methods

Data origin

Properties addressed

Material/Specimen

Date created

Author

License

Journal

Search Constraints

Search Results

Limit your search