Index Catalog // MDR

Description/Abstract:: In gapped Dirac materials, the topological current associated with each valley can flow in opposite directions creating long-range charge...
Keyword:: bilayer graphene, heterostructure, hexagonal boron nitride, and valley Hall effect
Resource Type:: Article
Author:: Takuya Iwasaki, Yoshifumi Morita, Kenji Watanabe, and Takashi Taniguchi
Journal:: Physical Review B
Date Uploaded:: 10/01/2025

Description/Abstract:: The nanosized boron vacancy (V−B) defect spot in hexagonal boron nitride (h-BN) is promising for a local magnetic field quantum sensor. O...
Keyword:: helium ion microscopy, hexagonal boron nitride, and quantum sensor
Resource Type:: Article
Author:: Hao Gu, Moeta Tsukamoto, Yuki Nakamura, Shu Nakaharai, Takuya Iwasaki, Kenji Watanabe, Takashi Taniguchi, Shinichi Ogawa, Yukinori Morita, Kento Sasaki, and Kensuke Kobayashi
Journal:: Physical Review Applied
Date Uploaded:: 09/01/2025

Description/Abstract:: Van der Waals heterostructure is the ideal material platform in the tunnel field effect transistors (TFET), because the band-to-band tunn...
Keyword:: All 2D heterostructure devices, Band to band tunneling, Negative differential resistance, Subthreshold swing, and Type III band alignment
Resource Type:: Article
Author:: Keigo Nakamura, Naoka Nagamura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, and Kosuke Nagashio
Journal:: ACS Applied Materials & Interfaces
Date Uploaded:: 10/12/2024

Description/Abstract:: A dual-gate anti-ambipolar transistor (AAT) with a two-dimensional ReS2 and WSe2 heterojunction was developed. The characteristic Λ-shape...
Keyword:: 2D materials, ReS2, WSe2, antiambipolar transistors, and reconfigurable logic circuits
Resource Type:: Article
Author:: Yoshitaka Shingaya, Amir Zulkefli, Takuya Iwasaki, Ryoma Hayakawa, Shu Nakaharai, Kenji Watanabe, Takashi Taniguchi, and Yutaka Wakayama
Journal:: Advanced Electronic Materials
Date Uploaded:: 18/09/2024

Description/Abstract:: Diamond electronic devices have garnered significant interest owing to their excellent semiconducting properties. We recently demonstrate...
Keyword:: Field-effect transistors, Hydrogen-terminated diamond, Self-aligned gate electrode, and hexagonal boron nitride
Resource Type:: Article
Author:: Yosuke Sasama, Takuya Iwasaki, Mohammad Monish, Kenji Watanabe, Takashi Taniguchi, and Yamaguchi Takahide
Journal:: Applied Physics Letters
Date Uploaded:: 12/09/2024

Description/Abstract:: Rare-earth tritellurides are van-der-Waals antiferromagnets which have been attracting attention as materials not only with high mobility...
Keyword:: Antiferromagnetism, Charge density waves, Hall effect, Magnetic thin films, Magnetoresistance, Rare-earth magnetic materials, and Shubnikov-de Haas effect
Resource Type:: Article
Author:: Tomo Higashihara, Ryotaro Asama, Ryoya Nakamura, Mori Watanabe, Nanami Tomoda, Thomas Johannes Hasiweder, Yuita Fujisawa, Yoshinori Okada, Takuya Iwasaki, Kenji Watanabe, Takashi Taniguchi, Nan Jiang, and Yasuhiro Niimi
Journal:: Physical Review B
Date Uploaded:: 19/04/2024

Description/Abstract:: We have developed a microspectroscopy technique for measuring gate-modulated reflectance to probe excitonic states in two-dimensional tra...
Keyword:: 2D materials, excitons, and modulation spectroscopy
Resource Type:: Article
Author:: Mengsong Xue, Kenji Watanabe, Takashi Taniguchi, and Ryo Kitaura
Journal:: APPLIED PHYSICS LETTERS
Date Uploaded:: 12/01/2024
Date Modified:: 15/01/2024

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