The automatization of the atom probe tomography (APT) tip preparation using a focused ion beam (FIB) with a scanning electron microscopy ...

An area selectable Mg doping via ion implantation (I/I) is essential to realize gallium nitride (GaN) based power switching devices. Conv...

Aberration-corrected scanning transmission electron microscopy (STEM) has been advancing resolution, sensitivity, and microanalysis due t...

GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS g...

The nanocrystalline structure and soft magnetic properties of melt-spun Fe-B-P-Cu ribbons are largely influenced by heating rates for cry...

We investigated the influence of the buffer material and a cryogenic temperature deposition process on the voltage-controlled magnetic an...

Ni-base superalloys are known for their high temperature oxidation resistance, however, impurity of S at ppm order can significantly dec...

The utilization of orbital transport provides a versatile and efficient spin manipulation mechanism. As interest in orbital-mediated spin...

The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out usin...

Behaviors of vacancy-type defects in ion-implanted GaN were studied by means of positron annihilation. Si or Mg ions were implanted into ...