Index Catalog // MDR

Calculations of electron inelastic mean free paths. XII. Data for 42 inorganic compounds over the 50 eV to 200 keV range with the full Penn algorithm

Description/Abstract:: We have calculated inelastic mean free paths (IMFPs) for 42 inorganic compounds (AgBr, AgCl, AgI, Al2O3, AlAs, AlN, AlSb, cubic BN, hexa...
Keyword:: Electron Inelastic Mean Free Path, IMFP, and TPP-2M
Resource Type:: Article
Author:: Shinotsuka, Hiroshi, Tanuma, Shigeo, Powell, Cedric J., and Penn, Dave R.
Journal:: Surface and Interface Analysis
Date Uploaded:: 26/06/2020
Date Modified:: 08/07/2021

Calculations of Mean Escape Depths of Photoelectrons in Elemental Solids Excited by Linearly Polarized X-rays for High-Energy Photoelectron Spectroscopy

Description/Abstract:: We have calculated mean escape depths (MEDs, D) of photoelectrons from Si, Cu, and Au excited by linearly polarized X-rays over the 50 to...
Keyword:: MED, asymmetry parameter, high-energy photoelectron spectroscopy, lnearly polarized X-rays, and mean escape depth
Resource Type:: Article
Author:: Tanuma, Shigeo, Yoshikawa, Hideki, Shinotsuka, Hiroshi, and Ueda, Ryuichi
Journal:: Journal of Electron Spectroscopy and Related Phenomena
Date Uploaded:: 26/06/2020
Date Modified:: 02/07/2021

電子線マイクロアナライザーによるMg-Ge合金の定量 -Mg Kαに対するGeの質量吸収係数の検討-, Electron microprobe analysis of Mg-Ge alloy -Examination of the mass absorption coefficient of Ge for MgKα–

Description/Abstract:: 電子線マイクロアナライザーは広く材料の分析に用いられ，定量分析法はZAF法としてほぼ確立されている．しかし，Mg-Ge合金においては，定量分析の結果MgとGeの濃度の合計120wt.% と異常な値を示した．しかも電子線の加速電圧が高くなるに従ってMgの定量値が上昇する．こ...
Keyword:: Mg-Ge alloy, ZAF, electron probe microanalyzer, and mass absorption coefficient
Resource Type:: Article
Author:: Nishio, Mitsuaki, Imai, Motoharu, Tanuma, Shigeo, Yoshikawa, HIdeki, and Isoda, Yukihiro
Journal:: Journal of Surface Analysis
Date Uploaded:: 20/07/2020
Date Modified:: 22/07/2020

Calculations of Electron Inelastic Mean Free Paths. XI. Data for Liquid Water for Energies from 50 eV to 30 keV

Description/Abstract:: We calculated electron inelastic mean free paths (IMFPs) for liquid water from its optical energy-loss function (ELF) for electron energi...
Keyword:: EAL, Electron Inelastic Mean Free Path, IMFP, effective attenuation length, liquid water, relativistic TPP-2M, relativistic full Penn algorithm, and static structure factor
Resource Type:: Article
Author:: Shinotsuka, Hiroshi, Da, Bo, Tanuma, Shigeo, Yoshikawa, Hideki, Powell , Cedric J, and Penn, David R
Journal:: Surface and Interface Analysis
Date Uploaded:: 31/07/2020
Date Modified:: 02/07/2021

InP/GaInAsP多層膜におけるAES深さ分解能の温度依存性

Description/Abstract:: InP/GaInAsP多層膜を用いて，AES深さ方向分析における深さ分解能の試料温度依存性について検討を行なった．試料温度は，０〜５０℃（１０℃間隔）およびー１２０，−２０℃の８条件としてデプスプロファイルを取得した．スパッタリング条件は，イオン種：Ar，イオン加速電圧：1...
Keyword:: InP/GaInAsP多層膜, Auger Depth Profiling Analysis, Depth Resolution, and Sample Temperature
Material/Specimen:: InP/GaInAsP Multilayer Film
Resource Type:: Article
Author:: Ogiwara, Toshiya and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 28/05/2021
Date Modified:: 28/05/2021

Arイオンスパッタリングされた各種化合物半導体表面のSEM観察

Description/Abstract:: 各種化合物半導体の表面をArイオンでスパッタリングして，その表面のSEM観察を行なった．そして，イオンスパッタリング時の試料温度および試料回転の有無と表面形状の関係を系統的に調べた．その結果，表面あれはスパッタリングされた表面全体に生成する場合とコーン状の突起物がランダムに...
Keyword:: compound semiconductor, surface observation using a scanning electron microscope, and argon ion sputtering
Material/Specimen:: InP, InSb, InAs, GaAs, GaSb, and GaP
Resource Type:: Article
Author:: Ogiwara, Toshiya and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 28/05/2021
Date Modified:: 04/06/2021

High-Sensitivity and High-Depth Resolution Auger Depth Profiling Using an Inclined Holder based on Geometric Characteristics of Auger Electron Spectroscopy Apparatus Equipped with Concentric Hemispherical Analyzer

Description/Abstract:: 半球型電子分光器を搭載したオージェ電子分光装置では，傾斜ホルダーを用いると装置のジオメトリー特性との関係からイオン及び一次電子の入射角の自由度が大きくなる.特に試料回転の回転軸が一次電子の入射方向と一致する場合は，傾斜ホルダーの回転角によってイオン入射角を設定でき，電...
Keyword:: Auger Depth Profiling Analysis, Inclined Holder, GaAs/AlAs Superlattice, and Si/Ge multiple delta-doped layers
Material/Specimen:: GaAs/AlAs Superlattice and Si/Ge multiple delta-doped layers
Resource Type:: Article
Author:: Ogiwara, Toshiya, Nagatomi, Takaharu, Kim, Kyung Joong, and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 14/06/2021
Date Modified:: 18/06/2021

試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析

Description/Abstract:: 試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析について検討を行った．分析時の試料保持温度を常温および-190℃として，それぞれの温度について電子線電流密度を３段階に変えてデプスプロファイルを取得した．イオン加速電圧は3kVである．また，測定したオー...
Keyword:: Auger Depth Profiling Analysis, Sample Cooling Method, and SiO2/Si
Material/Specimen:: SiO2:103nm/Si-Substrate
Resource Type:: Article
Author:: Ogiwara, Toshiya and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 26/07/2021
Date Modified:: 26/07/2021

InP/GaInAs多層膜のAES深さ方向分析のラウンドロビン試験報告（I）

Description/Abstract:: AES深さ方向分析の標準化を進めるために，InP/GaInAs多層膜を用いたデプスプロファイル測定のラウンドロビン試験を行った．参加した２３機関の装置は３社に分類され，その仕様が異なるため，測定条件は電子線およびイオンの加速電圧を3kVに固定して，その他の条件は各機関に一任...
Keyword:: Auger Depth Profiling Analysis, InP/GaInAs Specimen, and Round Robin Test
Material/Specimen:: InP/GaInAs Multilayer
Resource Type:: Article
Author:: Ogiwara, Toshiya and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 29/07/2021
Date Modified:: 02/08/2021

Ultra High Depth Resolution Auger Depth Profiling by Both Electron and Ion Beams at the Glancing Incidence using an Inclined Specimen Holder

Description/Abstract:: We developed a 85°-high-angle inclined specimen holder which enabled the specimen surface to be irradiated by both electron and ion beams...
Keyword:: Auger Depth Profiling Analysis, Inclined Holder, GaAs/AlAs Superlattice, and Si/Ge multiple delta-doped layers
Material/Specimen:: GaAs/AlAs Superlattice and Si/Ge multiple delta-doped layers
Resource Type:: Article
Author:: Ogiwara, Toshiya, Nagatomi, Takaharu, Kim, Kyung Joong, and Tanuma, Shigeo
Journal:: Journal of The Surface Science Society of Japan
Date Uploaded:: 08/09/2021
Date Modified:: 08/09/2021

Calculations of electron inelastic mean free paths. XII. Data for 42 inorganic compounds over the 50 eV to 200 keV range with the full Penn algorithm

Calculations of Mean Escape Depths of Photoelectrons in Elemental Solids Excited by Linearly Polarized X-rays for High-Energy Photoelectron Spectroscopy

電子線マイクロアナライザーによるMg-Ge合金の定量 -Mg Kαに対するGeの質量吸収係数の検討-, Electron microprobe analysis of Mg-Ge alloy -Examination of the mass absorption coefficient of Ge for MgKα–

Calculations of Electron Inelastic Mean Free Paths. XI. Data for Liquid Water for Energies from 50 eV to 30 keV

InP/GaInAsP多層膜におけるAES深さ分解能の温度依存性

Arイオンスパッタリングされた各種化合物半導体表面のSEM観察

High-Sensitivity and High-Depth Resolution Auger Depth Profiling Using an Inclined Holder based on Geometric Characteristics of Auger Electron Spectroscopy Apparatus Equipped with Concentric Hemispherical Analyzer

試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析

InP/GaInAs多層膜のAES深さ方向分析のラウンドロビン試験報告（I）

Ultra High Depth Resolution Auger Depth Profiling by Both Electron and Ion Beams at the Glancing Incidence using an Inclined Specimen Holder

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