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表面電子分光法における信号の減衰はいかに記述されるか? II. 誘電関数とIMFP
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Arイオンスパッタリングされた各種化合物半導体表面のSEM観察
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Calculations of Mean Escape Depths of Photoelectrons in Elemental Solids Excited by Linearly Polarized X-rays for High-Energy Photoelectron Spectroscopy
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試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析
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Calculations of electron inelastic mean free paths. XIII. Data for 14 organic compounds and water over the 50 eV to 200 keV range with the relativistic full Penn algorithm.
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電子線マイクロアナライザーによるMg-Ge合金の定量 -Mg Kαに対するGeの質量吸収係数の検討- and Electron microprobe analysis of Mg-Ge alloy -Examination of the mass absorption coefficient of Ge for MgKα–
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InP/GaInAsP多層膜におけるAES深さ分解能の温度依存性
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Calculations of Electron Inelastic Mean Free Paths III. Data for 15 Inorganic compounds over the 50 - 2000 eV Range
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Depth Profiling Analysis of InP/GaInAsP Multilayers by Auger Electron Spectroscopy. Effects of Zalar Rotation and Liquid Nitrogen Cold Stage
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Calculations of Electron Inelastic Mean Free Paths. XI. Data for Liquid Water for Energies from 50 eV to 30 keV
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