Calculations of Electron Inelastic Mean Free Paths (IMFPs). XIV. Calculated IMFPs for LiF and Si3N4 and Development of an Improved Predictive IMFP Formula

表面電子分光法における信号の減衰はいかに記述されるか？ II. 誘電関数とIMFP

Calculations of electron inelastic mean free paths. XIII. Data for 14 organic compounds and water over the 50 eV to 200 keV range with the relativistic full Penn algorithm.

Calculations of electron inelastic mean free paths. IX. Data for 41 elemental solids over the 50 eV to 30 keV range

Calculation of Electron Inelastic Mean Free Paths (IMFPs). VII. Reliability of the TPP-2M IMFP Predictive Equation

Experimental Determination of Electron Inelastic Mean Free Paths in 13 Elemental Solids in the 50 eV to 5000 eV Energy Range by Elastic-Peak Electron Spectroscopy

Depth Profiling Analysis of InP/GaInAsP Multilayers by Auger Electron Spectroscopy. Effects of Zalar Rotation and Liquid Nitrogen Cold Stage

Ultra High Depth Resolution Auger Depth Profiling by Both Electron and Ion Beams at the Glancing Incidence using an Inclined Specimen Holder

InP/GaInAs多層膜のAES深さ方向分析のラウンドロビン試験報告（I）

試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析

High-Sensitivity and High-Depth Resolution Auger Depth Profiling Using an Inclined Holder based on Geometric Characteristics of Auger Electron Spectroscopy Apparatus Equipped with Concentric Hemispherical Analyzer

Arイオンスパッタリングされた各種化合物半導体表面のSEM観察

InP/GaInAsP多層膜におけるAES深さ分解能の温度依存性

Calculations of Electron Inelastic Mean Free Paths. XI. Data for Liquid Water for Energies from 50 eV to 30 keV

電子線マイクロアナライザーによるMg-Ge合金の定量 -Mg Kαに対するGeの質量吸収係数の検討- and Electron microprobe analysis of Mg-Ge alloy -Examination of the mass absorption coefficient of Ge for MgKα–

Calculations of Mean Escape Depths of Photoelectrons in Elemental Solids Excited by Linearly Polarized X-rays for High-Energy Photoelectron Spectroscopy

Calculations of electron inelastic mean free paths. XII. Data for 42 inorganic compounds over the 50 eV to 200 keV range with the full Penn algorithm