Index Catalog // MDR

Arイオンスパッタリングされた各種化合物半導体表面のSEM観察

Description/Abstract:: 各種化合物半導体の表面をArイオンでスパッタリングして，その表面のSEM観察を行なった．そして，イオンスパッタリング時の試料温度および試料回転の有無と表面形状の関係を系統的に調べた．その結果，表面あれはスパッタリングされた表面全体に生成する場合とコーン状の突起物がランダムに...
Keyword:: compound semiconductor, surface observation using a scanning electron microscope, and argon ion sputtering
Material/Specimen:: InP, InSb, InAs, GaAs, GaSb, and GaP
Resource Type:: Article
Author:: Ogiwara, Toshiya and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 28/05/2021
Date Modified:: 04/06/2021

Calculations of Mean Escape Depths of Photoelectrons in Elemental Solids Excited by Linearly Polarized X-rays for High-Energy Photoelectron Spectroscopy

Description/Abstract:: We have calculated mean escape depths (MEDs, D) of photoelectrons from Si, Cu, and Au excited by linearly polarized X-rays over the 50 to...
Keyword:: MED, asymmetry parameter, high-energy photoelectron spectroscopy, lnearly polarized X-rays, and mean escape depth
Resource Type:: Article
Author:: Tanuma, Shigeo, Yoshikawa, Hideki, Shinotsuka, Hiroshi, and Ueda, Ryuichi
Journal:: Journal of Electron Spectroscopy and Related Phenomena
Date Uploaded:: 26/06/2020
Date Modified:: 02/07/2021

試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析

Description/Abstract:: 試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析について検討を行った．分析時の試料保持温度を常温および-190℃として，それぞれの温度について電子線電流密度を３段階に変えてデプスプロファイルを取得した．イオン加速電圧は3kVである．また，測定したオー...
Keyword:: Auger Depth Profiling Analysis, Sample Cooling Method, and SiO2/Si
Material/Specimen:: SiO2:103nm/Si-Substrate
Resource Type:: Article
Author:: Ogiwara, Toshiya and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 26/07/2021
Date Modified:: 26/07/2021

Calculations of electron inelastic mean free paths. XIII. Data for 14 organic compounds and water over the 50 eV to 200 keV range with the relativistic full Penn algorithm.

Description/Abstract:: We have calculated inelastic mean free paths (IMFPs) for 14 organic compounds (26-n-paraffin, adenine, β-carotene, diphenyl-hexatriene, g...
Keyword:: IMFP, electron inelastic mean free paths, organic compounds, FPA, bandgap correction, and liquid water
Material/Specimen:: 26-n-paraffin, adenine, polystyrene, poly(2-vinylpridine), thymine, uracil, liquid water, β-carotene, diphenyl-hexatriene, guanine, Kapton, polyacetylene, poly(butene-1-sulfone), polyethylene, and polymethylmethacrylate
Resource Type:: Article
Author:: Shinotsuka, Hiroshi, Tanuma, Shigeo, and Powell, CJ
Journal:: SURFACE AND INTERFACE ANALYSIS
Date Uploaded:: 11/04/2022
Date Modified:: 13/04/2022

Electron microprobe analysis of Mg-Ge alloy -Examination of the mass absorption coefficient of Ge for MgKα–, 電子線マイクロアナライザーによるMg-Ge合金の定量 -Mg Kαに対するGeの質量吸収係数の検討-

Description/Abstract:: Electron probe micro analyzer is used for the composition analysis of a wide variety of materials, and its quantification is almost estab...
Keyword:: Mg-Ge alloy, ZAF, electron probe microanalyzer, and mass absorption coefficient
Resource Type:: Article
Author:: Isoda, Yukihiro, Imai, Motoharu, Tanuma, Shigeo, Nishio, Mitsuaki, and Yoshikawa, HIdeki
Journal:: Journal of Surface Analysis
Date Uploaded:: 20/07/2020
Date Modified:: 22/07/2020

InP/GaInAsP多層膜におけるAES深さ分解能の温度依存性

Description/Abstract:: InP/GaInAsP多層膜を用いて，AES深さ方向分析における深さ分解能の試料温度依存性について検討を行なった．試料温度は，０〜５０℃（１０℃間隔）およびー１２０，−２０℃の８条件としてデプスプロファイルを取得した．スパッタリング条件は，イオン種：Ar，イオン加速電圧：1...
Keyword:: InP/GaInAsP多層膜, Auger Depth Profiling Analysis, Depth Resolution, and Sample Temperature
Material/Specimen:: InP/GaInAsP Multilayer Film
Resource Type:: Article
Author:: Ogiwara, Toshiya and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 28/05/2021
Date Modified:: 28/05/2021

Depth Profiling Analysis of InP/GaInAsP Multilayers by Auger Electron Spectroscopy. Effects of Zalar Rotation and Liquid Nitrogen Cold Stage

Description/Abstract:: We have investigated the Auger depth profiling analysis of InP/GaInAsP multilayer specimens. It is difficult to obtain the Auger depth pr...
Keyword:: Auger Depth Profiling Analysis, InP/GaInAsP Multilayers, Zalar Rotation Method, and Sample Cooling Method
Material/Specimen:: InP/GaInAsP Multilayers
Resource Type:: Article
Author:: Ogiwara, Toshiya, Tanuma, Shigeo, Nagasawa, Yuji, and Ikeo, Nobuyuki
Journal:: Journal of The Surface Science Society of Japan
Date Uploaded:: 09/09/2021
Date Modified:: 09/09/2021

Calculations of Electron Inelastic Mean Free Paths. XI. Data for Liquid Water for Energies from 50 eV to 30 keV

Description/Abstract:: We calculated electron inelastic mean free paths (IMFPs) for liquid water from its optical energy-loss function (ELF) for electron energi...
Keyword:: EAL, Electron Inelastic Mean Free Path, IMFP, effective attenuation length, liquid water, relativistic TPP-2M, relativistic full Penn algorithm, and static structure factor
Resource Type:: Article
Author:: Shinotsuka, Hiroshi, Da, Bo, Tanuma, Shigeo, Yoshikawa, Hideki, Powell , Cedric J, and Penn, David R
Journal:: Surface and Interface Analysis
Date Uploaded:: 31/07/2020
Date Modified:: 02/07/2021

Experimental Determination of Electron Inelastic Mean Free Paths in 13 Elemental Solids in the 50 eV to 5000 eV Energy Range by Elastic-Peak Electron Spectroscopy

Description/Abstract:: We have determined electron inelastic mean free paths (IMFPs) in C (graphite), Si, Cr, Fe, Cu, Zn, Ga, Mo, Ag, Ta, W, Pt and Au by elasti...
Keyword:: electron inelastic mean free paths, experimental determination, elastic- peak electron spectroscopy, and Monte Carlo simulation
Material/Specimen:: C (graphite), Si, Cr, Fe, Cu, Zn, Ga, Mo, Ag, Ta, W, Pt and Au
Resource Type:: Article
Author:: Tanuma, Shigeo, Shiratori, T, Kimura, Takashi, Goto, Keisuke, Ichimura, Shingo, and Powell, Cedric J
Journal:: SURFACE AND INTERFACE ANALYSIS
Date Uploaded:: 04/10/2021
Date Modified:: 18/10/2021

Calculation of Electron Inelastic Mean Free Paths (IMFPs). VII. Reliability of the TPP-2M IMFP Predictive Equation

Description/Abstract:: We report comparisons of electron inelastic mean free paths (IMFPs) determined from our predictive IMFP equation TPP-2M and reference IMF...
Keyword:: electron inelastic mean free paths, IMFP, IMFPs, TPP-2M, number of valence electrons, elemental solids, and surface sensitivity
Resource Type:: Article
Author:: Tanuma, Shigeo, Powell, C. J., and Penn, D. R.
Journal:: SURFACE AND INTERFACE ANALYSIS
Date Uploaded:: 01/11/2021
Date Modified:: 04/01/2022

Arイオンスパッタリングされた各種化合物半導体表面のSEM観察

Calculations of Mean Escape Depths of Photoelectrons in Elemental Solids Excited by Linearly Polarized X-rays for High-Energy Photoelectron Spectroscopy

試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析

Calculations of electron inelastic mean free paths. XIII. Data for 14 organic compounds and water over the 50 eV to 200 keV range with the relativistic full Penn algorithm.

Electron microprobe analysis of Mg-Ge alloy -Examination of the mass absorption coefficient of Ge for MgKα–, 電子線マイクロアナライザーによるMg-Ge合金の定量 -Mg Kαに対するGeの質量吸収係数の検討-

InP/GaInAsP多層膜におけるAES深さ分解能の温度依存性

Depth Profiling Analysis of InP/GaInAsP Multilayers by Auger Electron Spectroscopy. Effects of Zalar Rotation and Liquid Nitrogen Cold Stage

Calculations of Electron Inelastic Mean Free Paths. XI. Data for Liquid Water for Energies from 50 eV to 30 keV

Experimental Determination of Electron Inelastic Mean Free Paths in 13 Elemental Solids in the 50 eV to 5000 eV Energy Range by Elastic-Peak Electron Spectroscopy

Calculation of Electron Inelastic Mean Free Paths (IMFPs). VII. Reliability of the TPP-2M IMFP Predictive Equation

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