Index Catalog // MDR

Depth Profiling Analysis of InP/GaInAsP Multilayers by Auger Electron Spectroscopy. Effects of Zalar Rotation and Liquid Nitrogen Cold Stage

Description/Abstract:: We have investigated the Auger depth profiling analysis of InP/GaInAsP multilayer specimens. It is difficult to obtain the Auger depth pr...
Keyword:: Auger Depth Profiling Analysis, InP/GaInAsP Multilayers, Zalar Rotation Method, and Sample Cooling Method
Material/Specimen:: InP/GaInAsP Multilayers
Resource Type:: Article
Author:: Ogiwara, Toshiya, Tanuma, Shigeo, Nagasawa, Yuji, and Ikeo, Nobuyuki
Journal:: Journal of The Surface Science Society of Japan
Date Uploaded:: 09/09/2021
Date Modified:: 09/09/2021

Ultra High Depth Resolution Auger Depth Profiling by Both Electron and Ion Beams at the Glancing Incidence using an Inclined Specimen Holder

Description/Abstract:: We developed a 85°-high-angle inclined specimen holder which enabled the specimen surface to be irradiated by both electron and ion beams...
Keyword:: Auger Depth Profiling Analysis, Inclined Holder, GaAs/AlAs Superlattice, and Si/Ge multiple delta-doped layers
Material/Specimen:: GaAs/AlAs Superlattice and Si/Ge multiple delta-doped layers
Resource Type:: Article
Author:: Ogiwara, Toshiya, Nagatomi, Takaharu, Kim, Kyung Joong, and Tanuma, Shigeo
Journal:: Journal of The Surface Science Society of Japan
Date Uploaded:: 08/09/2021
Date Modified:: 08/09/2021

InP/GaInAs多層膜のAES深さ方向分析のラウンドロビン試験報告（I）

Description/Abstract:: AES深さ方向分析の標準化を進めるために，InP/GaInAs多層膜を用いたデプスプロファイル測定のラウンドロビン試験を行った．参加した２３機関の装置は３社に分類され，その仕様が異なるため，測定条件は電子線およびイオンの加速電圧を3kVに固定して，その他の条件は各機関に一任...
Keyword:: Auger Depth Profiling Analysis, InP/GaInAs Specimen, and Round Robin Test
Material/Specimen:: InP/GaInAs Multilayer
Resource Type:: Article
Author:: Ogiwara, Toshiya and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 29/07/2021
Date Modified:: 02/08/2021

試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析

Description/Abstract:: 試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析について検討を行った．分析時の試料保持温度を常温および-190℃として，それぞれの温度について電子線電流密度を３段階に変えてデプスプロファイルを取得した．イオン加速電圧は3kVである．また，測定したオー...
Keyword:: Auger Depth Profiling Analysis, Sample Cooling Method, and SiO2/Si
Material/Specimen:: SiO2:103nm/Si-Substrate
Resource Type:: Article
Author:: Ogiwara, Toshiya and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 26/07/2021
Date Modified:: 26/07/2021

High-Sensitivity and High-Depth Resolution Auger Depth Profiling Using an Inclined Holder based on Geometric Characteristics of Auger Electron Spectroscopy Apparatus Equipped with Concentric Hemispherical Analyzer

Description/Abstract:: 半球型電子分光器を搭載したオージェ電子分光装置では，傾斜ホルダーを用いると装置のジオメトリー特性との関係からイオン及び一次電子の入射角の自由度が大きくなる.特に試料回転の回転軸が一次電子の入射方向と一致する場合は，傾斜ホルダーの回転角によってイオン入射角を設定でき，電...
Keyword:: Auger Depth Profiling Analysis, Inclined Holder, GaAs/AlAs Superlattice, and Si/Ge multiple delta-doped layers
Material/Specimen:: GaAs/AlAs Superlattice and Si/Ge multiple delta-doped layers
Resource Type:: Article
Author:: Ogiwara, Toshiya, Nagatomi, Takaharu, Kim, Kyung Joong, and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 14/06/2021
Date Modified:: 18/06/2021

Auger Depth Profiling Analysis of FeNi/CoFeB/FeNi Specimen Using an Ultra Low Angle Incidence Ion Beam

Description/Abstract:: 磁気ヘッド材料として用いられているFeNi:5 nm/CoFeB:3 nm/FeNi:10 nm多層薄膜の深さ方向組成分布を調べるために，極低角度入射イオンビームを用いたオージェ深さ方向分析によりイオン加速電圧0.5 kVおよび3.0 kVのスパッタ条件で分析を行った．その...
Keyword:: Auger Depth Profiling Analysis, Ultra Low Angle Incidence Ion Beam, and FeNi/CoFeB/FeNi Thin Film
Material/Specimen:: FeNi/CoFeB/FeNi Thin Film
Resource Type:: Article
Author:: Ogiwara, Toshiya, Yanagiuchi, Katsuaki, and Yoshikawa, Hideki
Journal:: Journal of Surface Analysis
Date Uploaded:: 28/05/2021
Date Modified:: 04/06/2021

Arイオンスパッタリングされた各種化合物半導体表面のSEM観察

Description/Abstract:: 各種化合物半導体の表面をArイオンでスパッタリングして，その表面のSEM観察を行なった．そして，イオンスパッタリング時の試料温度および試料回転の有無と表面形状の関係を系統的に調べた．その結果，表面あれはスパッタリングされた表面全体に生成する場合とコーン状の突起物がランダムに...
Keyword:: compound semiconductor, surface observation using a scanning electron microscope, and argon ion sputtering
Material/Specimen:: InP, InSb, InAs, GaAs, GaSb, and GaP
Resource Type:: Article
Author:: Ogiwara, Toshiya and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 28/05/2021
Date Modified:: 04/06/2021

InP/GaInAsP多層膜におけるAES深さ分解能の温度依存性

Description/Abstract:: InP/GaInAsP多層膜を用いて，AES深さ方向分析における深さ分解能の試料温度依存性について検討を行なった．試料温度は，０〜５０℃（１０℃間隔）およびー１２０，−２０℃の８条件としてデプスプロファイルを取得した．スパッタリング条件は，イオン種：Ar，イオン加速電圧：1...
Keyword:: InP/GaInAsP多層膜, Auger Depth Profiling Analysis, Depth Resolution, and Sample Temperature
Material/Specimen:: InP/GaInAsP Multilayer Film
Resource Type:: Article
Author:: Ogiwara, Toshiya and Tanuma, Shigeo
Journal:: Journal of Surface Analysis
Date Uploaded:: 28/05/2021
Date Modified:: 28/05/2021

Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam

Description/Abstract:: We have investigated the Auger depth profiling analysis of HfO2/Si by the glancing-angle ion beam sputtering method at an incident angle ...
Keyword:: Auger Depth Profiling analysis, HfO2/Si, and Ultra Low Angle Incidence Ion Beam
Material/Specimen:: HfO2
Resource Type:: Article
Author:: Yoshikawa, Hideki, Ogiwara, Toshiya, and Nagata, Takahiro
Journal:: Journal of Surface Analysis
Date Uploaded:: 25/05/2021
Date Modified:: 26/05/2021

Depth Profiling Analysis of InP/GaInAsP Multilayers by Auger Electron Spectroscopy. Effects of Zalar Rotation and Liquid Nitrogen Cold Stage

Ultra High Depth Resolution Auger Depth Profiling by Both Electron and Ion Beams at the Glancing Incidence using an Inclined Specimen Holder

InP/GaInAs多層膜のAES深さ方向分析のラウンドロビン試験報告（I）

試料冷却法を併用したAES深さ方向分析によるSiO2/Si熱酸化膜の分析

High-Sensitivity and High-Depth Resolution Auger Depth Profiling Using an Inclined Holder based on Geometric Characteristics of Auger Electron Spectroscopy Apparatus Equipped with Concentric Hemispherical Analyzer

Auger Depth Profiling Analysis of FeNi/CoFeB/FeNi Specimen Using an Ultra Low Angle Incidence Ion Beam

Arイオンスパッタリングされた各種化合物半導体表面のSEM観察

InP/GaInAsP多層膜におけるAES深さ分解能の温度依存性

Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam

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