# data[].attributes.publisher.organization
National Institute for Materials Science

# data[].attributes.titles[].title
PROGRAM OF THE FATIGUE DATA SHEET PROJECT FOR ENGINEERING MATERIALS MANUFACTURED IN JAPAN

# data[].attributes.publisher.organization
National Institute for Materials Science

# data[].attributes.titles[].title
LONG-TERM CREEP RUPTURE DATA OBTAINED AFTER PUBLISHING THE FINAL EDITION OF THE CREEP DATA SHEETS

# data[].attributes.publisher.organization
National Institute for Materials Science

# data[].attributes.titles[].title
Ultranarrow Germanene Nanoribbons with Pentagonal Rings

# data[].attributes.descriptions[].description
One-dimensional elemental nanostructures, exemplified by graphene nanoribbons, hold great potential for advanced nanoelectronics, which can be further expanded by composition of heavier group 14 elements. Although the synthesis of germanene nanoribbons (GeNRs) has been recently demonstrated through high-temperature Ge atom segregation onto Pt and Ag adlayers from stepped Ge(110) bulk crystals, atomic-scale control of their structures remains unexplored. Here, we present ultranarrow GeNRs composed exclusively of pentagonal rings via thermal treatment of germanium clusters onto Ag(111) at 300 K with high-resolution scanning tunneling microscopy. Field-effect resonant tunneling spectra supported by ab initio calculations reveal that the work function of GeNRs is moderately higher than that of pristine Ag(111), resulting in a directional interfacial charge modulation. Our findings suggest that the GeNR/Ag(111) system offers an atomically defined platform for studying metal contacts, work function engineering, resonant tunneling, and substrate-stabilized one-dimensional electronic states as well as mechanical properties.

# data[].attributes.creators[].organization
国立研究開発法人　物質・材料研究機構

# data[].attributes.creators[].department
マテリアル基盤研究センター

# data[].attributes.creators[].organization
国立研究開発法人　物質・材料研究機構

# data[].attributes.creators[].department
マテリアル基盤研究センター

# data[].attributes.titles[].title
Statistical Variability of Image-Derived Observables in Rotating-Drum Tests of a Cohesive Metal Powder: Dynamic Angle of Repose Versus Contour-Length Statistics

# data[].attributes.descriptions[].description
Rotating-drum tests are widely employed for the characterization of powder flowability
through image-derived free-surface observables. However, the statistical stability of the
selected observable is rarely examined, although it directly determines the number of
images required for reliable evaluation. In the present study, two observables obtained
from rotating-drum tests of a cohesive metal powder are compared: the dynamic angle of
repose (AoR) and a contour-length-based index, R, derived from the extracted free-surface
contour.

# data[].attributes.titles[].title
Lattice-matched (Al
x
Sc
y
Ga1−
x
−
y
)2O3/

β

-Ga2O3 heterostructures with widely tunable bandgap

# data[].attributes.descriptions[].description
Bandgap engineering of β-Ga2O3 is essential for advancing its electronic and optoelectronic
applications. However, the growth of high-quality heteroepitaxial structures is often hampered by
large lattice mismatches. In this study, we design (AlxScyGa1−x−y)2O3 quaternary alloys in the form of both polycrystalline powders and heteroepitaxial films and demonstrate their lattice matching to β15 Ga2O3. Powder x-ray diffraction (XRD) measurements reveal that the lattice parameters of monoclinic(AlxScyGa0.8)2O3 match those of β-Ga2O3 when x/y = 1.5–3.2. (AlxScyGa1−x−y)2O3 thin films are grown on β-Ga2O3 (100) substrates by pulsed-laser deposition by varying the composition ratio x/y and the total substitutional fraction x + y. Nearly perfect lattice-matched epilayers with uniform composition and crystal structure are obtained up to x + y ~ 0.6, as confirmed by XRD and scanning transmission electron microscopy. Electron energy loss spectroscopy reveals a tunable bandgap from 4.5 to 5.8 eV. These results demonstrate that (AlxScyGa1−x−y)2O3/β-Ga2O3 heterostructures are promising platforms for ultrawide-bandgap semiconductor devices. 

# data[].attributes.rights[].description
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Kazuki Koreishi, Kodai Niitsu, Takuto Soma, Kohei Yoshimatsu, Akira Ohtomo; Lattice-matched (AlxScyGa1−x−y)2O3/β-Ga2O3 heterostructures with widely tunable bandgap. Appl. Phys. Lett. 6 July 2026; 129 (1): 012102 and may be found at https://doi.org/10.1063/5.0326523.

# data[].attributes.fundings[].funder_name
Japan Society for the Promotion of Science

# data[].attributes.fundings[].funder_name
Ministry of Education, Culture, Sports, Science and Technology

# data[].attributes.fundings[].funder_name
Japan Society for the Promotion of Science

# data[].attributes.fundings[].funder_name
Japan Society for the Promotion of Science

# data[].attributes.fundings[].funder_name
Japan Society for the Promotion of Science

# data[].attributes.fundings[].funder_name
Precursory Research for Embryonic Science and Technology

# data[].attributes.fundings[].funder_name
Precursory Research for Embryonic Science and Technology

# data[].attributes.fundings[].funder_name
Support for Pioneering Research Initiated by the Next Generation

# data[].attributes.titles[].title
VibeTube: a code for accurate extraction of CNTs’ chirality from TEM images

# data[].attributes.descriptions[].description
Accurate determination of the chiral indices of carbon nanotubes (CNTs) is crucial for their controllable synthesis and practical applications. Transmission electron microscopy (TEM) combined with electron diffraction has been one of the most reliable methods for characterizing the chiral indices of CNTs. However, it is still a challenge to analyze TEM images to extract chirality with high efficiency and accuracy, especially for nanotubes with a diameter larger than 2 nanometers. In this work, a Python code is developed with assistance from an artificial intelligence model (Claude Code) for the auto-extraction of CNTs’ chirality from TEM images. Precise and reliable measurement of the diameter was realized by using a new method to determine the average distance between the bright and dark fringes. Symmetry and geometry-based rules enabled measurements of layer lines in the Fourier transformation of TEM images with a sub-pixel resolution. As a result, an accuracy higher than 90% for CNTs with diameters ranging from 0.5 nm to 3.0 nm was achieved. High robustness has been validated by experimentally analyzing the chiralities of CNTs grown by a floating catalyst chemical vapor deposition method. The open-source codes and tools will be valuable for the research community to quantitatively identify the chirality distribution of CNTs with high efficiency.

# data[].attributes.sources[].title
Science and Technology of Advanced Materials

# data[].attributes.related_items[].title
Dataset for "VibeTube: a code for accurate extraction of CNTs’ chirality from TEM images"

# data[].attributes.fundings[].identifier
Support system for curiosity-driven research program

# data[].attributes.fundings[].funder_name
Ministry of Education, Culture, Sports, Science and Technology

# data[].attributes.filesets[].filename
VibeTube  a code for accurate extraction of CNTs  chirality from TEM images.pdf

# data[].attributes.thumbnail.filename
VibeTube  a code for accurate extraction of CNTs  chirality from TEM images.pdf

# data[].attributes.titles[].title
Photoelectron Holographic Study of Atomic Structure of Si Dopants for Si-doped κ-Ga₂O₃(001)

# data[].attributes.descriptions[].description
既に出版している濃度とは異なるSiをドープしたk-Ga2O3を用い、濃度が異なることによるドーパントの原子構造、キャリア密度、ドーパントの活性サイト・不活性サイトの割合変化を議論した。

# data[].attributes.titles[].title
Anomalous Hysteresis in Graphite/Boron Nitride Transistors

# data[].attributes.descriptions[].description
Field-effect devices constructed from van der Waals (vdW) materials with hexagonal boron nitride (hBN) as gate dielectrics usually exhibit negligible hysteresis, enabling exquisitely detailed studies of diverse gate-voltage-tuned phenomena. Recently, a dramatic hysteresis effect, sometimes called the “gate doesn’t work” or “electron ratchet” effect, has been observed sporadically in otherwise typical vdW devices. Its lack of reproducibility has hindered clear identification of its origin, which has been postulated to rely on the combination of bilayer graphene with moiré patterns from rotationally aligned hBN. Here, we report observing this effect in devices with thicker graphite channels, associating it with a single graphite surface. Remarkably, the hysteresis persists at room temperature, without intentional hBN alignment, and even with a WSe2 monolayer inserted between the graphite and hBN. Furthermore, it exhibits continuous relaxation over long time scales. These observations impose strong constraints on the origin of this puzzling phenomenon, which has exciting potential applications if it can be mastered.

# data[].attributes.creators[].organization
National Institute for Materials Science

# data[].attributes.creators[].organization
National Institute for Materials Science

# data[].attributes.rights[].description
This document is the Accepted Manuscript version of a Published Article that appeared in final form in Nano Letters, copyright © 2025 American Chemical Society. To access the final published article, see https://doi.org/10.1021/acs.nanolett.5c01799.

# data[].attributes.fundings[].funder_name
Ministry of Education, Culture, Sports, Science and Technology

# data[].attributes.fundings[].funder_name
Office of the Director of National Intelligence

# data[].attributes.fundings[].funder_name
Japan Society for the Promotion of Science

# data[].attributes.fundings[].funder_name
Japan Society for the Promotion of Science

# data[].attributes.titles[].title
Moiré-driven topological electronic crystals in twisted graphene

# data[].attributes.descriptions[].description
In a dilute two-dimensional electron gas, Coulomb interactions can stabilize the formation of a Wigner crystal. Although Wigner crystals are topologically trivial, it has been predicted that electrons in a partially filled band can break continuous translational symmetry and time-reversal symmetry spontaneously, resulting in a type of topological electron crystal known as an anomalous Hall crystal. Here we report signatures of a generalized version of the anomalous Hall crystal in twisted bilayer–trilayer graphene, whose formation is driven by the moiré potential. The crystal forms at a band filling of one electron per four moiré unit cells (ν = 1/4) and quadruples the unit-cell area, coinciding with an integer quantum anomalous Hall effect. The Chern number of the state is exceptionally tunable, and it can be switched reversibly between +1 and −1 by electric and magnetic fields. Several other topological electronic crystals arise in a modest magnetic field, originating from ν = 1/3, 1/2, 2/3 and 3/2. The quantum geometry of the interaction-modified bands is likely to be very different from that of the original parent band, which enables possible future discoveries of correlation-driven topological phenomena.

# data[].attributes.creators[].organization
National Institute for Materials Science

# data[].attributes.creators[].organization
National Institute for Materials Science

# data[].attributes.rights[].description
This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1038/s41586-024-08239-6

# data[].attributes.titles[].title
Relative contributions of solutes and forest dislocations to thermally activated plasticity in hydrogen-alloyed Fe-Cr-Ni austenitic steels: analyzing stress-dependence of Haasen plot

# data[].attributes.descriptions[].description
A competitive relationship between solute atoms and forest dislocations in determining the kinetics of thermally activated plasticity was studied for a Type310S (Fe-24Cr-19Ni) austenitic steel containing ∼8500 at ppm hydrogen (H), where solute H promotes solid solution-hardening through an increase in the effective stress. The investigation was performed by constructing Haasen plot (i.e., strain rate sensitivity (SRS) vs. flow stress) based on stress relaxation tests, and by analyzing its evolution in relation to the decay of effective stress. In the regime of high effective stress, alloying solute elements—whose overcoming by dislocations is retarded by the presence of H—acted as primary rate-controlling obstacles to dislocations, giving rise to a relatively large and strain-independent SRS. In terms of Haasen plot, these manifested as an increase in the intercept and a decrease in the slope. Beyond the phenomenological findings of these H-induced characteristic changes, the present study elaborates their physical origin and transient nature. As the effective stress decreased and dislocation density increased, such predominance of solutes was progressively taken over by forest dislocations, leading the Haasen plot for H-charged specimens to approach that for non-charged specimen. These new insights further establish how H, alloying elements, and forest dislocations sequentially compete as rate-controlling obstacles depending on mechanical loading condition and internal state of the material.

# data[].attributes.fundings[].funder_name
Japan Society for the Promotion of Science

# data[].attributes.fundings[].funder_name
Iketani Science and Technology Foundation

# data[].attributes.titles[].title
Bond angle distributions in silica polymorphs

# data[].attributes.descriptions[].description
Bond angle distributions (BADs) in silica crystals, silica glass, and siliceous zeolites were compared to understand the topology of silica polymorphs. It is found that the Si–O–Si bond angle is 180° in β-cristobalite, which is characteristic of highly symmetrical sixfold rings. In contrast, the Si–O–Si BAD of silica glass, obtained from a molecular dynamics–reverse Monte Carlo model, has an average value of 152.99° with a full width at half maximum (FWHM) of 20.48°. The Si–Si–Si BAD of β-cristobalite exhibits a peak at 109.81° demonstrates that SiSi4 hyper tetrahedra possess high symmetry. This feature is consistent with the presence of symmetric six-membered rings in β-cristobalite. On the other hand, both coesite and silicalite-1 (MFI) shows a variety of bond angles like silica glass, which is consistent with the variation of (Si–O)n ring size.

# data[].attributes.titles[].title
Nanoscale Thermal Transport in Bi ₂ (Te, Se) ₃ Thermoelectric Material Using Pulsed STEM

# data[].attributes.descriptions[].description
Understanding thermal transport properties at the nanoscale can provide strategies for efficiently managing heat or improvingenergy conversion efficiency in various applications. Furthermore, when thermal paths can be traced and imaged at the nanoscale,materials or electronic devices can be designed to minimize heat loss. The demand for these technologies continues to grow rapidly.Here, we demonstrate imaging of thermal propagation in thermoelectric material (Bi 2 (Te, Se) 3 ) using a spatially resolved techniquethat uses thermal waves induced by a pulsed convergent electron beam in a scanning transmission electron microscopy (STEM)mode at room temperature. The measurements with nanoscale clearly reveal the anisotropy inherent in Bi 2 (Te, Se) 3 by quantifyingthe relative values of phase delay at each irradiated position. Also, the thermal wave propagation is significantly sensitive to thedirections of the media, as if the heat carriers lose their memory of the vibration mode in each direction and switch to a newmode. Capturing various thermal properties, such as directional thermal pathways, from nanoscale imaging can provide a deeperunderstanding of how materials affect heat transport. This insight plays a vital role in designing materials for thermal managementand energy conversion devices.

# data[].attributes.creators[].organization
National Institute for Materials Science

# data[].attributes.creators[].organization
National Institute for Materials Science

# data[].attributes.creators[].organization
National Institute for Materials Science

# data[].attributes.creators[].organization
National Institute for Materials Science

# data[].attributes.fundings[].funder_name
Ministry of Education, Culture, Sports, Science and Technology

# data[].attributes.fundings[].funder_name
Precursory Research for Embryonic Science and Technology

# data[].attributes.filesets[].filename
Advanced Physics Research - 2026 - Cho - Nanoscale Thermal Transport in Bi2 Te  Se 3 Thermoelectric Material Using Pulsed (1).pdf

# data[].attributes.thumbnail.filename
Advanced Physics Research - 2026 - Cho - Nanoscale Thermal Transport in Bi2 Te  Se 3 Thermoelectric Material Using Pulsed (1).pdf

# data[].attributes.titles[].title
Fermi-Surface-Sheet Dependent Electron-Phonon Coupling in a Borocarbide Superconductor
                    <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline">
                      <mml:mrow>
                        <mml:msub>
                          <mml:mrow>
                            <mml:mtext>YNi</mml:mtext>
                          </mml:mrow>
                          <mml:mrow>
                            <mml:mn>2</mml:mn>
                          </mml:mrow>
                        </mml:msub>
                        <mml:msub>
                          <mml:mrow>
                            <mml:mi mathvariant="normal">B</mml:mi>
                          </mml:mrow>
                          <mml:mrow>
                            <mml:mn>2</mml:mn>
                          </mml:mrow>
                        </mml:msub>
                        <mml:mi mathvariant="normal">C</mml:mi>
                      </mml:mrow>
                    </mml:math>

# data[].attributes.descriptions[].description
We performed de Haas–van Alphen (dHvA) oscillation measurements and band-structure calculations for YNi₂B₂C. Our improved band structure successfully explained the origins of the large dHvA frequencies β and ζ, which were inexplicable in previous works. By comparing experimental effective masses with band masses, we determined the electron–phonon coupling for each orbit. The results showed a clear Fermi-surface-sheet dependence of the electron–phonon coupling strength, especially highlighting that the coupling for the band-28 sheet is very weak, almost absent for the orbit with B ∥ c. This finding is consistent with previous observations of dHvA oscillations from this orbit in the mixed state down to very low fields. Amid growing interest in high-temperature superconductivity driven by electron–phonon coupling in hydrides under high pressure, this Letter provides foundational data pivotal to precisely understanding electron–phonon coupling.

# data[].attributes.fundings[].funder_name
Japan Society for the Promotion of Science

# data[].attributes.fundings[].funder_name
Japan Society for the Promotion of Science

# data[].attributes.fundings[].identifier
World Premier International Research Center Initiative

# data[].attributes.fundings[].funder_name
Ministry of Education, Culture, Sports, Science and Technology

# data[].attributes.titles[].title
Scattering-tuned metal thermoelectrics, a new paradigm

# data[].attributes.descriptions[].description
In contrast to conventional semiconductor materials, this review outlines a new strategy for metals to be high-performance thermoelectric materials. We have proposed “intrinsic energy filtering” as a strategy to overcome the inherently low Seebeck coefficients in metals. This strategy involves engineering electronic structures where a dispersive conduction band and a localized flat band coexist near the Fermi level, creating strong energy dependence in the carrier relaxation time, thereby generating a large Seebeck coefficient S.
Effectiveness has manifested in distinct material systems; Ni–Au alloy, where disorder-mediated s–d interband scattering achieves exceptionally high power factors ~34 mWm-1K-2. Ni3Ge exhibits a relatively large S~-80 μVK-1 through interband scattering. Strategy was extended to the Kagome metal Ni3In, with topological flat band, revealing that Zener tunneling can suppress S, and thereby impetus to circumvent this.
These developments point to a new horizon for development of next-generation thermoelectric materials, unlocked by precise control of scattering mechanisms.

# data[].attributes.creators[].organization
National Institute for Materials Science

# data[].attributes.creators[].organization
National Institute for Materials Science

# data[].attributes.creators[].organization
National Institute for Materials Science

# data[].attributes.titles[].title
Long-range modulation of skyrmion population by local current injection

# data[].attributes.descriptions[].description
The thin-film magnetic skyrmion is designed to interact with each other as nonlinear response, enabling collective magnetic morphology at the nonequilibrium state. We here explore the alternative nonlinear morphology of multiple skyrmions induced by the orthogonal two-current injections for the Pt/Co/Ir multilayer platforms. The global currents induce polarity-dependent driving and accumulation of skyrmions across the whole area of a Hall bar device. Once another local current is injected from a micro-meter width ports, dozens of skyrmions follow their polarity manners of the local injection, resulting in total modulations of skyrmion population governed by a pair of two-current polarities. Such massive morphology tuning at the nonlinear region indicates resemblances with a skyrmion Hall effect, where current-induced accumulation and depletion create the nonequilibrium distributions of skyrmions toward Hall deflections. Our findings propose an alternative controlling method of skyrmion population, threshold-like responses, providing analogies with neuromorphic architectures and other advanced information-processing technologies.

# data[].attributes.creators[].organization
National Institute for Materials Science

# data[].attributes.creators[].organization
National Institute for Materials Science

# data[].attributes.creators[].organization
National Institute for Materials Science

# data[].attributes.rights[].description
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Sneha Yadav, Satoshi Sugimoto, Sandip Chatterjee, Kazuhito Tsukagoshi, Shinya Kasai; Long-range modulation of skyrmion population by local current injection. Appl. Phys. Lett. 6 July 2026; 129 (1): 012403 and may be found at https://doi.org/10.1063/5.0317950.

# data[].attributes.fundings[].funder_name
Japan Society for the Promotion of Science

# data[].attributes.fundings[].funder_name
Japan Society for the Promotion of Science

# data[].attributes.titles[].title
Anisotropic transport of Josephson vortices in atomic-layer superconductors on vicinal surfaces

# data[].attributes.descriptions[].description
Atomic steps have strong influences on surface two-dimensional superconductors. Josephson vortices formed at the atomic steps under magnetic fields may dominate transport phenomena at low temperatures, but its experimental verification is still lacking. Here, we report the vortex transport properties of atomic-layer superconductor Si(111)-(root7xroot3)-In with vicinal surfaces, for which Josephson vortices are directly observed by scanning tunneling microscopy. A sharp drop in resistance with decreasing temperature T, detected under out-of-plane magnetic field B, reveals a distinctive anisotropy with respect to the atomic step direction. The anisotropy of sheet resistance, proportional to that of vortex mobility, amounts to the order of 10^3 at intermediate magnetic fields. In the high-T and low-B region, Josephson vortices exhibit thermally excited creep motions with anisotropic activation energy U_act. A further increase in B suppresses U_act toward zero anisotropically, resulting in one-dimensional pinning-free vortex flow at 0.10 < B < 0.20 T. At the lowest temperatures, the vortex motion is governed by quantum tunneling. A B-T phase diagram constructed based on these measurements reveals multiple regions characterized by directionally dependent vortex-transport mechanisms.

# data[].attributes.fundings[].funder_name
Japan Society for the Promotion of Science

# data[].attributes.fundings[].funder_name
Japan Society for the Promotion of Science

# data[].attributes.fundings[].funder_name
Japan Society for the Promotion of Science

# data[].attributes.fundings[].funder_name
Japan Society for the Promotion of Science

# data[].attributes.fundings[].funder_name
Ministry of Education, Culture, Sports, Science and Technology

# data[].attributes.titles[].title
熱・スピン・光ハイブリッド新規磁気記録のためのナノ構造制御と原理提案

# data[].attributes.titles[].title
Nano-Structural Control and Principle Proposal for Thermal, Spin, and Optical Hybridized Advanced Magnetic Recording

# data[].attributes.descriptions[].description
we review recent progress on advanced magnetic recording technologies based on the hybridization of thermal, spin, and optical effects. We focus on two emerging approaches: three-dimensional heat-assisted magnetic recording (3D-HAMR) and thermal spin-torque heat-assisted magnetic recording (TST-HAMR). In addition, we introduce time-resolved magneto-optical Kerr effect (TRMOKE) measurements using femtosecond laser pulses as a powerful tool for probing ultrafast magnetization dynamics in the recording media. These developments highlight that HDD research is no longer a mature and isolated field but rather a multidisciplinary frontier where ideas from magnetic materials science, spintronics, optics, and thermal physics converge.

# data[].attributes.creators[].department
磁性・スピントロニクス材料研究センター/磁気記録材料グループ

# data[].attributes.creators[].department
磁性・スピントロニクス材料研究センター/磁気記録材料グループ

# data[].attributes.creators[].organization
東北大学 電気通信研究所

# data[].attributes.creators[].department
磁性・スピントロニクス材料研究センター/磁気機能デバイスグループ

# data[].attributes.creators[].department
磁性・スピントロニクス材料研究センター/磁気記録材料グループ

# data[].attributes.publisher.organization
公益社団法人  日本磁気学会

# data[].attributes.rights[].description
© 公益社団法人  日本磁気学会  (The Magnetics Society of Japan)

# data[].attributes.filesets[].filename
21-3まぐね最終原稿（磯上）.docx

# data[].attributes.thumbnail.filename
21-3まぐね最終原稿（磯上）.docx

# data[].attributes.descriptions[].description
超薄膜エレクトロニクスグループにおける研究の取り組みについて紹介する。
特に、次世代半導体技術に必要不可欠な原子層堆積法を用いた新規機能性薄膜材料の探索について述べる。

# data[].attributes.creators[].department
ナノアーキテクトニクス材料研究センター/半導体材料分野/超薄膜エレクトロニクスグループ

# data[].attributes.titles[].title
Influence of differences in wrought processes on mechanical properties of AZ31 magnesium alloy

# data[].attributes.descriptions[].description
The influence of different wrought processes on the mechanical properties of AZ31
magnesium alloy was investigated in terms of the strain state induced during these
processes using a combination of finite element method (FEM) analysis and tensile
testing. A process with a large compressive strain develops an intensive basal texture,
leading to high strength and poor ductility.

# data[].attributes.creators[].organization
National Institute for Materials Science

# data[].attributes.sources[].title
Journal of Materials Research and Technology